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EZ1582 EZ1582 0211BN TEVAL CP604 1117B 60R380C6 JXT1088
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  s m d ty p e w w w . k e x i n . c o m . c n 1 m osf e t p - ch an n el m osf et f r9024n ( k fr 9 0 2 4 n ) f e a tu r e s v d s ( v ) = - 5 5 v i d = - 1 1 a ( v g s = - 1 0 v ) r d s ( o n ) 1 7 5 m ( v g s = - 1 0 v ) f a s t s w i t c h i n g f u l l y a v a l a n c h e r a t e d 2 . 3 0 . 6 0 + 0 . 1 - 0 . 1 6 . 5 0 + 0 . 1 5 - 0 . 1 5 1 . 5 0 + 0 . 1 5 - 0 . 1 5 0 . 8 0 + 0 . 1 - 0 . 1 4 . 6 0 + 0 . 1 5 - 0 . 1 5 0 . 5 0 + 0 . 1 5 - 0 . 1 5 9 . 7 0 + 0 . 2 - 0 . 2 5 . 3 0 + 0 . 2 - 0 . 2 2 . 3 0 + 0 . 1 - 0 . 1 0 . 5 0 + 0 . 8 - 0 . 7 5 . 5 5 + 0 . 1 5 - 0 . 1 5 2 . 6 5 + 0 . 2 5 - 0 . 1 1 . 5 0 + 0 . 2 8 - 0 . 1 0 . 1 2 7 m a x 3 . 8 0 to-252 u n i t : m m 4 1 gate 2 drain 3 source 4 drain a b s o l u te m a x i m u m ra ti n g s t a = 2 5 s y m b o l r a t i n g u n i t v d s - 5 5 v g s 2 0 t c = 2 5 c - 1 1 t c = 1 0 0 c - 8 i d m - 4 4 a v a l a n c h e c u r r e n t i a r - 6 . 6 p o w e r d i s s i p a t i o n t c = 2 5 c p d 3 8 w e a s 6 2 e a r 3 . 8 d v / d t - 1 0 v / n s 5 0 1 1 0 r t h jc 3 . 3 t j 1 5 0 t st g - 5 5 t o 1 5 0 t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - a m b i e n t ( p c b m o u n t ) r e p e t i t i v e a v a l a n c h e e n e r g y m j p e a k d i o d e r e c o v e r y d v / d t ( n o t e . 2 ) i d p u l s e d d r a i n c u r r e n t p a r a m e t e r d r a i n - s o u r c e v o l t a g e g a t e - s o u r c e v o l t a g e c o n t i n u o u s d r a i n c u r r e n t v / w t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - c a s e t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - a m b i e n t r t h ja j u n c t i o n t e m p e r a t u r e j u n c t i o n s t o r a g e t e m p e r a t u r e r a n g e a s i n g l e p u l s e a v a l a n c h e e n e r g y ( n o t e . 1 ) n o t e . 1 : s t a r t i n g t j = 2 5 c , l = 2 . 8 m h , r g = 2 5 , i a s = - 6 . 6 a . n o t e . 2 : i s d - 6 . 6 a , d i / d t 2 4 0 a / s , v d d v ( b r ) d s s , t j 1 5 0 c s d g
s m d ty p e w w w . k e x i n . c o m . c n 2 m os f e t p - ch an n el m osf et f r9024n ( k fr 9 0 2 4 n ) e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = - 2 5 0 a , v g s = 0 v - 5 5 v v d s = - 5 5 v , v g s = 0 v - 2 5 v d s = - 4 4 v , v g s = 0 v , t j = 1 5 0 - 2 5 0 g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 2 0 v 1 0 0 n a g a t e t h r e s h o l d v o l t a g e v g s ( t h ) v d s = v g s i d = - 2 5 0 a - 2 - 4 v s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e r d s ( o n ) v g s = - 1 0 v , i d = - 6 . 6 a 1 7 5 m f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = - 2 5 v , i d = - 7 . 2 a 2 . 5 s i n p u t c a p a c i t a n c e c i ss 3 5 0 o u t p u t c a p a c i t a n c e c o ss 1 7 0 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 9 2 t o t a l g a t e c h a r g e q g 1 9 g a t e s o u r c e c h a r g e q g s 5 . 1 g a t e d r a i n c h a r g e q g d 1 0 i n t e r n a l d r a i n i n d u c t a n c e l d 4 . 5 i n t e r n a l s o u r c e i n d u c t a n c e l s 7 . 5 t u r n - o n d e l a y t i m e t d ( o n ) 1 3 t u r n - o n r i s e t i m e t r 5 5 t u r n - o f f d e l a y t i m e t d ( o f f ) 2 3 t u r n - o f f f a l l t i m e t f 3 7 b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r 4 7 7 1 b o d y d i o d e r e v e r s e r e c o v e r y c h a r g e q r r 8 4 1 3 0 n c m a x i m u m b o d y - d i o d e c o n t i n u o u s c u r r e n t i s - 11 p u l s e d s o u r c e c u r r e n t i s m - 4 4 d i o d e f o r w a r d v o l t a g e v s d i s = - 7.2 a , v g s = 0 v , t j = 2 5 c , ( n o t e . 1 ) - 1 . 6 v z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s u a v d s = - 2 8 v , i d = - 7 . 2 a , r g = 2 4 , r d = 3 . 7 ( n o t e . 1 ) v g s = 0 v , v d s = - 2 5 v , f = 1 m h z v g s = - 1 0 v , v d s = - 4 4 v , i d = - 7 . 2 a ( n o t e . 1 ) a n h p f n c n s i f = - 7 . 2 a , d i / d t = 1 0 0 a / u s , t j = 2 5 c , n o t e . 1 : p u l s e w i d t h 3 0 0 s ; d u t y c y c l e 2 % . b e t wee n lea d , 6mm (0 . 25in . ) f ro m p a cka g e an d ce n te r o f di e co n ta ct s d g
s m d ty p e w w w . k e x i n . c o m . c n 3 m osf e t p - ch an n el m osf et f r9024n ( k fr 9 0 2 4 n ) t y p i c a l ch a r a c te r i s i ti c s fig 4 . normaliz ed o n-res i st anc e v s. t emperat ure fig 2 . typical output characteristics fig 1 . typical output characteristics fig 3. typical transfer characteristics 0 . 1 1 1 0 10 0 0 . 1 1 1 0 10 0 20 s pulse wi d t h t = 2 5 c j to p b otto m v g s -15 v -10 v -8 . 0 v -7 . 0 v -6 . 0 v -5 . 5 v -5 . 0 v -4 . 5 v -v , drain- t o-source v ol t age (v ) - i , drain- t o- s ource curren t ( a ) d s d -4 . 5 v 0 . 1 1 1 0 10 0 0 . 1 1 1 0 10 0 20 s pulse wi d t h t = 15 0 c j to p b otto m v g s -15 v -10 v -8 . 0 v -7 . 0 v -6 . 0 v -5 . 5 v -5 . 0 v -4 . 5 v -v , drain- t o-source vol t age (v ) - i , drain- t o- s ource curren t ( a ) d s d -4 . 5 v -6 0 -4 0 -2 0 0 2 0 4 0 6 0 8 0 10 0 12 0 14 0 16 0 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 t , jun ct ion t empera t ur e ( c ) r , drain- t o- s our c e o n re s i st an c e (normalized ) j d s (on ) v = i = g s d -10 v -11 a 0 . 1 1 1 0 10 0 4 5 6 7 8 9 1 0 v = -25 v 20 s pulse wi d t h d s - v , g a t e- t o-source vol t age (v ) - i , drain- t o-source curren t (a ) g s d t = 150 c j t = 25 c j fig 6. typical gate charge vs. g at e-t o-s ourc e volt age fig 5 . typical capacitance vs. drain-to-source voltage 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 0 0 1 0 1 1 c , c a p a c i t a n c e ( p f ) d s v , d r a i n - t o -s o u r c e v ol t a g e ( v ) a v = 0 v , f = 1 m h z c = c + c , c s h o r t e d c = c c = c + c g s i s s g s g d d s r s s g d o s s d s g d c i s s c o s s c r s s 0 4 8 1 2 1 6 2 0 0 5 1 0 1 5 2 0 2 5 g g s a - v , g a t e - t o - s o u r c e v o l t a g e ( v ) q , t o t a l g a t e c h a rg e ( n c ) f o r t e s t c i r c u i t s e e f i g u r e 1 3 i = - 7 . 2 a v = - 4 4 v v = - 2 8 v d d s d s
s m d ty p e w w w . k exi n . co m . c n 4 m osfe t . p - ch an n el m osf et f r9024n ( k fr 9 0 2 4 n ) t y p i c a l ch a r a c te r i s i ti c s fig 8. maximum safe operating area fig 7 . t ypi c al s ource-drain diod e f orward vol t ag e 0 . 1 1 1 0 10 0 0 . 2 0 . 6 0 . 9 1 . 3 1 . 6 - v ,s ource- t o-drain vol t age ( v ) - i , re v er s e drain curren t ( a ) s d s d v = 0 v g s t = 25 c j t = 150 c j 0 . 1 1 1 0 10 0 100 0 1 1 0 10 0 op era tio n i n t h is a r e a l i m ite d b y r d s (on ) s ingle p uls e t t = 150 c = 25 c j c -v , drain- t o-source vol t age ( v ) - i , drain curren t (a) i , drain curren t (a ) d s d 10u s 100u s 1m s 10m s fig 11 . maximum effective transient thermal impedance, junction-to-case fig 9 . maximum drain current vs. case t empera t ur e fig 10a . switching time test circuit fig 10 b . switching time waveforms v d s -10 v pulse width 1 s du t y f ac t or 0.1 % r d v g s v d d r g d . u .t . + - v ds 90% 10% v gs t d(on ) t r t d( of f ) t f 2 5 5 0 7 5 10 0 12 5 15 0 0 . 0 3 . 0 6 . 0 9 . 0 12 . 0 t , ca s e t empera t ur e ( c ) - i , drain curren t (a) c d 0 . 0 1 0 . 1 1 1 0 0 . 0000 1 0 . 000 1 0 . 00 1 0 . 0 1 0 . 1 no t e s : 1 . du ty f ac t or d = t / t 2 . peak t = p x z + t 1 2 j d m t h j c c p t t d m 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 t h j c 0 . 0 1 0 . 0 2 0 . 0 5 0 . 1 0 0 . 2 0 d = 0 . 5 0 si n g l e p ul s e ( t h e rm a l r espo n se )
s m d ty p e w w w . k e x i n . c o m . c n 5 m osf e t p - ch an n el m osf et f r9024n ( k fr 9 0 2 4 n ) t y p i c a l ch a r a c te r i s i ti c s fig 13 b. g at e charge t est circ uit fig 13a . b as ic g at e charge w av ef orm fig 12c . maximum av alan c he e nergy v s. drain curren t q g q gs q gd v g charg e -10 v d . u . t . v ds i d i g - 3 m a v gs . 3 f 50k ? . 2 f 12v cu rr en t regula t o r same t y pe as d.u.t . curren t s amplin g re s is t or s + - fig 12 b. unc lamped i ndu ct iv e w avef orms fig 12a . un c lamped i nduc t ive t es t cir c ui t t p v ( b r ) d s s i a s r g i a s 0 . 0 1 ? t p d . u . t l v d s v d d d r i v e r a 15 v - 20 v - + v d d 2 5 5 0 7 5 10 0 12 5 15 0 0 2 0 4 0 6 0 8 0 10 0 12 0 s t ar t ing t , junc t ion t empera t ur e ( c ) e , s ingle p ulse a v alan c he energy (m j ) j a s i d to p b otto m -3 . 0 a -4 . 2 a -6 . 6 a
s m d ty p e w w w . k exi n . co m . c n 6 m osf e t p - ch an n el m osf et f r9024n ( k fr 9 0 2 4 n ) t y p i c a l ch a r a c te r i s i ti c s peak diode recovery dv/dt test circuit p .w. p eriod di/ dt diode rec overy dv/dt ripple 5% b ody diode f orward drop re-a pplied volt age reverse recovery current b ody diode f orward current v gs = 10v v dd i sd driver gate drive d.u.t . i s d w aveform d.u.t . v ds w aveform inductor curent d = p .w . p eriod + - + + + - - - 3 4 2 r g v d d ? d v/ dt cont rolled by r g ? i s d controlled by duty factor "d" ? d.u.t. - device under test d . u . t * circui t la y ou t con s idera t ion s ? low st ra y i ndu ct an ce ? ground plane ? low lea k age i ndu ct an c e curren t t ran sf orme r 1 * reverse polarity of d.u.t for p-channel v g s [ ] [ ] ** * v g s = 5.0v for logic level and 3v drive devices [ ] ** * fig 14 . for p-channel hexfets


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